Heterodimensional Charge-Carrier Confinement in Sub-Monolayer InAs in GaAs
Low-dimensional semiconductor nanostructures, in which charge carriers are confined in a number of spatial dimensions, are the focus of much solid-state physics research, offering superior optical and electronic properties over their bulk counterparts. Both two-dimensional (2D) and zero-dimensional (0D) structures have seen wide-ranging applications in laser diodes, solar cells and LEDs to name but a few. Here we present the concept of heterodimensionality: the ability of a structure to confine electrons and their positive counterparts, holes, in different dimensionalities. Our heterodimensional samples contain stacked layers of sub-monolayer (SML) indium arsenide (InAs) depositions in gallium arsenide (GaAs), i.e. incomplete single atomic layers of InAs in a GaAs matrix. The
Download
- harrison_presentation.pdf - 1.08MB
- harrison_abstract.pdf - 0.08MB