Specification Chart

Semiconductor Expand/Collapse all	Semiconductor Module	Wave Optics Module

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Physics Interfaces and Study Types
Schrödinger Equation
Eigenvalue
Stationary
Time Dependent
Semiconductor
Semiconductor Equilibrium
Semiconductor Initialization
Small-Signal Analysis, Frequency Domain
Stationary
Time Dependent
Material Library
Aluminium Gallium Arsenide
Diamond
Gallium Antimonide
Gallium Arsenide
Gallium Nitride
Gallium Phosphide
Germanium
Indium Antimonide
Indium Arsenide
Indium Phosphide
Silicon
Predefined Multiphysics Interfaces
Schrödinger-Poisson Equation
Multiphysics Couplings
Schrödinger-Poisson Coupling
Physics Interfaces
Electrostatics
Schrödinger Equation
Semiconductor Optoelectronics, Beam Envelopes¹
Multiphysics Couplings
Semiconductor-Electromagnetic Waves Coupling
Physics Interfaces
Electromagnetic Waves, Beam Envelopes
Semiconductor
Semiconductor Optoelectronics, Frequency Domain¹
Multiphysics Couplings
Semiconductor-Electromagnetic Waves Coupling
Physics Interfaces
Electromagnetic Waves, Frequency Domain
Semiconductor
Schrödinger Equation Boundary Conditions
Zero Flux
Zero Probability
Open Boundary
Incoming type (advanced physics options)
Outgoing type (default)
Incoming wave
Periodic Condition
Continuity
Floquet-Bloch periodicity
Schrödinger Equation Volumetric Domain Properties
Dissipation
Effective Mass
Electron Potential Energy
Lorentz Force
Rotating Frame
Semiconductor Boundary Conditions
Surface Charge Density
Thin Insulator Gate
Continuity/Heterojunction
Continuous Quasi-Fermi Levels Model
Thermionic Emission Model
WKB Tunneling Model
Electrostatics Boundary Conditions
Distributed Capacitance
Electric Displacement Field
Electric Potential
External Surface Charge Accumulation
Floating Gate
Floating Potential
Ground
Periodic Condition
Surface Charge Accumulation
Terminal
Zero Charge
Insulation
Surface Traps: Continuous Energy Levels
Surface Traps: Discrete Energy Levels
Insulator Interface
Surface Traps: Continuous Energy Levels
Surface Traps: Discrete Energy Levels
Tunneling: Fowler-Nordheim Model
Tunneling: User defined
Metal Contact
Contact Resistance
Ideal Ohmic
Ideal Schottky
WKB Tunneling Model
Trap-Assisted Heterointerface Recombination
Continuous Trap Levels
Discrete Trap Levels
Transition Between Discrete Levels
Trap-Assisted Surface Recombination
Continuous Trap Levels
Discrete Trap Levels
Shockley-Read-Hall Recombination
Transition Between Discrete Levels
Semiconductor Carrier Statistics
Fermi-Dirac
Maxwell-Boltzmann
Semiconductor Discretization
Density Gradient
Finite Element
Finite Element (Log Equation Formulation)
Finite Volume
Quasi Fermi Level
Semiconductor Volumetric Domain Properties
Electrostatics Domain Properties
Charge Conservation
Space Charge Density
Semiconductor Material Model
Incomplete Ionization
Band gap narrowing
Empirical models: Slotboom and Jain-Roulston
Doping
Analytic Doping Model
Box distribution (with preset profiles)
User defined distribution
Geometric Doping Model
Boundary Selection for Doping Profile
Preset profiles
User defined profile
Generation-Recombination
Auger Recombination
Direct Recombination
Impact Ionization Generation
User-Defined Generation
User-Defined Recombination
Trap-Assisted Recombination
Continuous Trap Levels
Discrete Trap Levels
Shockley-Read-Hall Recombination
Transition Between Discrete Levels
Mobility Models
Arora Mobility Model
Caughey-Thomas Mobility Model
Fletcher Mobility Model
Klaassen Unified Mobility Model
Lombardi Surface Mobility Model
Power Law Mobility Model
User Defined Mobility Model
Optoelectronics
Indirect Optical Transitions
Empirical silicon absorption
User defined absorption
Optical Transitions
Spontaneous/Stimulated Emission
Direct bandgap model
User defined transition model
Trap Density
Analytic Trap Density
Box distribution (with preset profiles)
User defined distribution
Geometric Trap Density
Boundary Selection for Trap Density
Preset profiles
User defined profile
Requires all indicated products

Specification Chart

Semiconductor